PART |
Description |
Maker |
LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM Static RAMs (1Mb) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
BS616LV2018 |
Asynchronous 2M(128Kx16) bits Static RAM
|
BSI
|
BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS616LV8013 |
Asynchronous 8M(512Kx16) bits Static RAM From old datasheet system
|
BSI
|
BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM From old datasheet system
|
BSI
|
BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16 Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
|
Elpida Memory, Inc.
|
EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS45S16400J-6TLA1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
|
TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|